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BrianG
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05.10.2008, 05:16 PM

FETs are "voltage driven" (very high input impedance) as opposed to current-driven transistors, so paralleling them is easy without "loading down" the driver circuit. FETs also have a negative temperature coefficient which means they conduct less the more they heat up, so they are kinda self-regulating in a way.

And parallelling more FETs splits the current load between each as well as reducing the overall Rdson for reduced voltage drop and heat for a given current.

But the more FETs you have, the longer the signal paths become, which may be a problem with noise and/or transient response since we're dealing with capacitive FET gates.

I'm sure Griffin can elaborate much more on this, but I saw he was offline so I thought I'd throw in my $0.02.
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